Part Number | RGT8TM65DGC9 |
---|---|
Manufacturer | ROHM Semiconductor |
Other Part Numbers | RGT8TM65DGC9-ND |
Description | IGBT TRENCH FLD 650V 5A TO220NFM |
Detailed Description | IGBT Trench Field Stop 650 V 5 A 16 W Through Hole TO-220NFM |
Manufacturer Standard Lead Time | 22 weeks |
Datasheet | Datasheet |
Category | ||
---|---|---|
Manufacturer | ROHM Semiconductor | |
Series | ||
Packaging | Tube | |
Part Status | Active | |
Package / Case | TO-220-3 Full Pack | |
Mounting Type | Through Hole | |
Operating Temperature | -40°C ~ 175°C (TJ) | |
Input Type | Standard | |
Reverse Recovery Time (trr) | 40 ns | |
Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 4A | |
Supplier Device Package | TO-220NFM | |
IGBT Type | Trench Field Stop | |
Td (on/off) @ 25°C | 17ns/69ns | |
Test Condition | 400V, 4A, 50Ohm, 15V | |
Gate Charge | 13.5 nC | |
Current - Collector (Ic) (Max) | 5 A | |
Voltage - Collector Emitter Breakdown (Max) | 650 V | |
Current - Collector Pulsed (Icm) | 12 A | |
Power - Max | 16 W |
RESOURCE TYPE | LINK | |
---|---|---|
Datasheets | RGT8TM65DGC9 | |
Product Training Modules | High-Power Devices for EV DC Fast-Charging Stations | |
Product Training Modules | Industrial Motor Products: Part 1 - Power Devices/Gate Drivers | |
Product Training Modules | Insulated Gate Bipolar Transistors (IGBTs) |
ATTRIBUTE | DESCRIPTION | |
---|---|---|
ECCN | EAR99 | |
HTSUS | 8541.29.0095 | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
REACH Status | REACH Unaffected | |
RoHS Status | ROHS3 Compliant |
QUANTITY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | $2.00 | $2.00 |
50 | $1.61 | $80.50 |
100 | $1.32 | $132.00 |
500 | $1.12 | $560.00 |
1,000 | $0.95 | $950.00 |
2,000 | $0.90 | $1,800.00 |
5,000 | $0.87 | $4,350.00 |
10,000 | $0.84 | $8,400.00 |