RGT8NS65DGC9

Part Number	RGT8NS65DGC9
Manufacturer	ROHM Semiconductor
Other Part Numbers	RGT8NS65DGC9-ND
Description	IGBT TRENCH FIELD 650V 8A TO262
Detailed Description	IGBT Trench Field Stop 650 V 8 A 65 W Through Hole TO-262
Manufacturer Standard Lead Time	22 weeks
Datasheet	Datasheet

Category		Discrete Semiconductor Products Transistors IGBTs Single IGBTs
Manufacturer		ROHM Semiconductor
Series
Packaging		Tube
Part Status		Active
Package / Case		TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type		Through Hole
Operating Temperature		-40°C ~ 175°C (TJ)
Input Type		Standard
Reverse Recovery Time (trr)		40 ns
Vce(on) (Max) @ Vge, Ic		2.1V @ 15V, 4A
Supplier Device Package		TO-262
IGBT Type		Trench Field Stop
Td (on/off) @ 25°C		17ns/69ns
Test Condition		400V, 4A, 50Ohm, 15V
Gate Charge		13.5 nC
Current - Collector (Ic) (Max)		8 A
Voltage - Collector Emitter Breakdown (Max)		650 V
Current - Collector Pulsed (Icm)		12 A
Power - Max		65 W

RESOURCE TYPE		LINK
Datasheets		RGT8NS65DGC9
Product Training Modules		High-Power Devices for EV DC Fast-Charging Stations
Product Training Modules		Industrial Motor Products: Part 1 - Power Devices/Gate Drivers
Product Training Modules		Insulated Gate Bipolar Transistors (IGBTs)

ATTRIBUTE		DESCRIPTION
ECCN		EAR99
HTSUS		8541.29.0095
Moisture Sensitivity Level (MSL)		1 (Unlimited)
REACH Status		REACH Unaffected
RoHS Status		ROHS3 Compliant

Can ship immediately.

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