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RGTH00TK65GC11

RGTH00TK65GC11

Part Number
RGTH00TK65GC11
Manufacturer ROHM Semiconductor
Other Part Numbers
RGTH00TK65GC11-ND
Description IGBT TRNCH FIELD 650V 35A TO3PFM
Detailed Description IGBT Trench Field Stop 650 V 35 A 72 W Through Hole TO-3PFM
Manufacturer Standard Lead Time 22 weeks
Datasheet Datasheet

Product Attributes

Category
Manufacturer ROHM Semiconductor
Series
Packaging
Tube
Part Status Active
Package / Case TO-3PFM, SC-93-3
Mounting Type Through Hole
Operating Temperature -40°C ~ 175°C (TJ)
Input Type Standard
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 50A
Supplier Device Package TO-3PFM
IGBT Type Trench Field Stop
Td (on/off) @ 25°C 39ns/143ns
Test Condition 400V, 50A, 10Ohm, 15V
Gate Charge 94 nC
Current - Collector (Ic) (Max) 35 A
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector Pulsed (Icm) 200 A
Power - Max 72 W

Documents & Media

RESOURCE TYPE LINK
Datasheets RGTH00TK65GC11
Product Training Modules Insulated Gate Bipolar Transistors (IGBTs)
Product Training Modules Industrial Motor Products: Part 1 - Power Devices/Gate Drivers
Product Training Modules High-Power Devices for EV DC Fast-Charging Stations

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
ECCN EAR99
HTSUS 8541.29.0095
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
RoHS Status ROHS3 Compliant

In Stock: 403

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